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Abstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr⁻¹m⁻². These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications. 

Not AvailableTwo-dimensional halide perovskites (2D-HPs) are of significant interest for their applications in optoelectronic devices. Part of this increased interest in 2D-HPs stems from their increased stability relative to their 3D counterparts. Here, the origin of higher stability in 2D-HPs is mainly attributed to the bulky ammonium cation layers, which can act as a blocking layer against moisture and oxygen ingression and ion diffusion. While 2D-HPs have demonstrated increased stability, it is not clear how the structure of the ammonium ion impacts the material stability. Herein, we investigate how the structure of ammonium cations, including three n-alkyl ammoniums, phenethylammonium (PEA) and five PEA derivatives, anilinium (An), benzylammonium (BzA), and cyclohexylmethyl ammonium (CHMA), affects the crystal structure and air, water, and oxygen stability of 2D tin halide perovskites (2D-SnHPs). We find that stability is influenced by several factors, including the molecular packing and intermolecular interactions in the organic layer, steric effects around the ammonium group, the orientation distribution of the 2D sheets, and the hydrophobicity of the perovskite film surface. With superior hydrophobicity, strong interactions between organic layers, and a high extent of parallel oriented inorganic sheets, the 2-(4-trifluoromethyl-phenyl)-ethylammonium (4-TFMPEA) ion forms the most stable 2D-SnHP among the 12 ammonium cations investigated. 

Abstract Electroluminescence efficiencies and stabilities of quasi-two-dimensional halide perovskites are restricted by the formation of multiple-quantum-well structures with broad and uncontrollable phase distributions. Here, we report a ligand design strategy to substantially suppress diffusion-limited phase disproportionation, thereby enabling better phase control. We demonstrate that extending the π-conjugation length and increasing the cross-sectional area of the ligand enables perovskite thin films with dramatically suppressed ion transport, narrowed phase distributions, reduced defect densities, and enhanced radiative recombination efficiencies. Consequently, we achieved efficient and stable deep-red light-emitting diodes with a peak external quantum efficiency of 26.3% (average 22.9% among 70 devices and cross-checked) and a half-life of ~220 and 2.8 h under a constant current density of 0.1 and 12 mA/cm 2 , respectively. Our devices also exhibit wide wavelength tunability and improved spectral and phase stability compared with existing perovskite light-emitting diodes. These discoveries provide critical insights into the molecular design and crystallization kinetics of low-dimensional perovskite semiconductors for light-emitting devices.